SI2338DS-T1-GE3

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SI2338DS-T1-GE3 datasheet

• Маркировка
  SI2338DS-T1-GE3
• Производитель
  Siliconix
• Описание
  Siliconix SI2338DS-T1-GE3 Configuration: Single Continuous Drain Current: 6 A Drain-source Breakdown Voltage: 30 V Fall Time: 7 ns Forward Transconductance Gfs (max / Min): 24 S Gate Charge Qg: 8.2 nC Gate-source Breakdown Voltage: 20 V Mounting Style: SMD/SMT Package / Case: SOT-23 Part # Aliases: SI2338DS-GE3 Power Dissipation: 2.5 W Product Category: MOSFET Resistance Drain-source Rds (on): 0.023 Ohms Rise Time: 11 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 20 ns RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 0.023 Ohms Forward Transconductance gFS (Max / Min): 24 S Typical Turn-Off Delay Time: 20 ns
• Количество страниц
  10 шт.
• Форматы файла
  HTML, PDF

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